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| insulated gate bipolar transistor 05/17/05 www.irf.com 1 irgb30b60kpbf irgs30b60kpbf IRGSL30B60KPBF v ces = 600v i c = 50a, t c =100c at t j =175c t sc > 10s, t j =150c v ce(on) typ. = 1.95v features ? low vce (on) non punch through igbt technology ? 10s short circuit capability ? square rbsoa ? positive vce (on) temperature coefficient ? maximum junction temperature rated at 175c ? lead-free benefits ? benchmark efficiency for motor control ? rugged transient performance ? low emi ? excellent current sharing in parallel operation d 2 pak irgs30b60kpbf to-220ab irgb30b60kpbf to-262 IRGSL30B60KPBF e c g n-channel * r jc (end of life) = 0.65c/w. this is the maximum measured value after 1000 temperature cycles from -55 to 150c and is accounted for by the physical wearout of the die attach medium. absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 78 i c @ t c = 100c continuous collector current 50 a i cm pulse collector current (ref.fig.c.t.5) 120 i lm clamped inductive load current 120 v isol rms isolation voltage, terminal to case, t=1 min. 2500 v v ge gate-to-emitter voltage 20 p d @ t c = 25c maximum power dissipation 370 w p d @ t c = 100c maximum power dissipation 180 t j operating junction and -55 to +175 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal / mechanical characteristics parameter min. typ. max. units r jc junction-to-case- igbt ??? ??? 0.41* c/w r cs case-to-sink, flat, greased surface ??? 0.50 ??? r ja junction-to-ambient, typical socket mount ??? ??? 62 r ja junction-to-ambient (pcb mount, steady state) ??? ??? 40 wt weight ??? 1.44 ??? g
irgb/s/sl30b60kpbf 2 www.irf.com note to are on page 13 electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig. v (br)ces collector-to-emitter breakdown voltage 600??v v ge = 0v, i c = 500a ? v (br)ces / ? t j temperature coeff. of breakdown volta g e ?0.40?v/c v ge = 0v, i c = 1ma (25c-150c) ?1.952.35 i c = 30a, v ge = 15v, t j = 25c 5,6,7 v ce(on) collector-to-emitter voltage ? 2.40 2.75 v i c = 30a, v ge = 15v, t j = 150c 8,9,10 ? 2.6 2.95 i c = 30a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 3.5 4.5 5.5 v v ce = v ge , i c = 250a 8,9,10 ? v ge(th) / ? t j threshold voltage temp. coefficient ? -10 ? mv/ c v ce = v ge , i c = 1.0ma (25c-150c) 11 gfe forward transconductance ? 18 ? s v ce = 50v, i c = 50a, pw = 80s ?5.0250 v ge = 0v, v ce = 600v i ces zero gate voltage collector current ? 1000 2000 a v ge = 0v, v ce = 600v, t j = 150c ?18303000 v ge = 0v, v ce = 600v, t j = 175c i ges gate-to-emitter leakage current ? ? 100 na v ge = 20v, v ce = 0v switchin g characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions ref.fig. q g total gate charge (turn-on) ? 102 153 i c = 30a 17 q ge gate-to-emitter charge (turn-on) ? 14 21 nc v cc = 400v ct1 q gc gate-to-collector charge (turn-on) ? 44 66 v ge = 15v e on turn-on switching loss ? 350 620 i c = 30a, v cc = 400v ct4 e off turn-off switching loss ? 825 955 j v ge = 15v, r g = 10 ? , l = 200h e tot total switching loss ? 1175 1575 t j = 25c t d(on) turn-on delay time ? 46 60 i c = 30a, v cc = 400v t r rise time ? 28 39 ns v ge = 15v, r g = 10 ? , l = 200h ct4 t d(off) turn-off delay time ? 185 200 t j = 25c t f fall time ? 31 40 e on turn-on switching loss ? 635 1085 i c = 30a, v cc = 400v ct4 e off turn-off switching loss ? 1150 1350 j v ge = 15v, r g = 10 ? , l = 200h 12,14 e tot total switching loss ? 1785 2435 t j = 150c wf1,wf2 t d(on) turn-on delay time ? 46 60 i c = 30a, v cc = 400v 13,15 t r rise time ? 28 39 ns v ge = 15v, r g = 10 ? , l = 200h ct4 t d(off) turn-off delay time ? 205 235 t j = 150c wf1 t f fall time ? 32 42 wf2 l e internal emitter inductance ? 7.5 ? nh measured 5mm from package c ies input capacitance ? 1750 2500 v ge = 0v c oes output capacitance ? 160 255 pf v cc = 30v 16 c res reverse transfer capacitance ? 60 90 f = 1.0mhz rbsoa reverse bias safe operating area full square t j = 150c, i c = 120a, vp = 600v 4 v cc =500v,v ge = +15v to 0v,r g =10 ? ct2 scsoa short circuit safe operating area 10 ? ? s t j = 150c, vp = 600v, r g = 10 ? ct3 v cc =360v,v ge = +15v to 0v wf3 i sc (peak) peak short circuit collector current ? 200 ? a wf3 irgb/s/sl30b60kpbf www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c; t j 150c fig. 4 - reverse bias soa t j = 150c; v ge =15v 1 10 100 1000 10000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 10 s 100 s 1ms dc 10 100 1000 v ce (v) 1 10 100 1000 i c a ) 0 20 40 60 80 100 120 140 160 180 t c (c) 0 10 20 30 40 50 60 70 80 i c ( a ) 0 20 40 60 80 100 120 140 160 180 t c (c) 0 50 100 150 200 250 300 350 400 p t o t ( w ) irgb/s/sl30b60kpbf 4 www.irf.com fig. 6 - typ. igbt output characteristics t j = 25c; tp = 80s fig. 5 - typ. igbt output characteristics t j = -40c; tp = 80s fig. 7 - typ. igbt output characteristics t j = 150c; tp = 80s 012345 v ce (v) 0 10 20 30 40 50 60 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 012345 v ce (v) 0 10 20 30 40 50 60 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 012345 v ce (v) 0 10 20 30 40 50 60 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v irgb/s/sl30b60kpbf www.irf.com 5 fig. 11 - typ. transfer characteristics v ce = 50v; tp = 10s fig. 10 - typical v ce vs. v ge t j = 150c fig. 9 - typical v ce vs. v ge t j = 25c fig. 8 - typical v ce vs. v ge t j = -40c 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 15a i ce = 30a i ce = 60a 5 101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 15a i ce = 30a i ce = 60a 5101520 v ge (v) 0 2 4 6 8 10 12 14 16 18 20 v c e ( v ) i ce = 15a i ce = 30a i ce = 60a 0 5 10 15 20 v ge (v) 0 50 100 150 200 250 i c e ( a ) t j = 25c t j = 150c t j = 150c t j = 25c irgb/s/sl30b60kpbf 6 www.irf.com fig. 15 - typ. switching time vs. r g t j = 150c; l=200h; v ce = 400v i ce = 30a; v ge = 15v fig. 14 - typ. energy loss vs. r g t j = 150c; l=200h; v ce = 400v i ce = 30a; v ge = 15v fig. 13 - typ. switching time vs. i c t j = 150c; l=200h; v ce = 400v r g = 10 ? ; v ge = 15v fig. 12 - typ. energy loss vs. i c t j = 150c; l=200h; v ce = 400v, r g = 10 ? ; v ge = 15v 0 20406080 i c (a) 0 500 1000 1500 2000 2500 3000 e n e r g y ( j ) e off e on 0 20 40 60 80 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 25 50 75 100 125 r g ( ? ) 0 500 1000 1500 2000 2500 3000 e n e r g y ( j ) e on e off 0 25 50 75 100 125 r g ( ? ) 10 100 1000 10000 s w i c h i n g t i m e ( n s ) t r td off t f td on irgb/s/sl30b60kpbf www.irf.com 7 fig 18. maximum transient thermal impedance, junction-to-case (igbt) fig. 16 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 17 - typical gate charge vs. v ge i ce = 30a; l = 600h 0 20 40 60 80 100 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 25 50 75 100 125 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e ( v ) 200v 400v 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.200 0.000428 0.209 0.013031 j j 1 1 2 2 r 1 r 1 r 2 r 2 c ci i / ri ci= i / ri irgb/s/sl30b60kpbf 8 www.irf.com fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 1k vcc dut 0 l fig.c.t.3 - s.c.soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit l rg vcc diode clamp / dut dut / driver - 5v rg vcc dut r = v cc i cm l rg 80 v dut 480v + - dc driver dut 360v irgb/s/sl30b60kpbf www.irf.com 9 fig. wf3- typ. s.c waveform @ t c = 150c using fig. ct.3 fig. wf1- typ. turn-off loss waveform @ t j = 150c using fig. ct.4 fig. wf2- typ. turn-on loss waveform @ t j = 150c using fig. ct.4 -100 0 100 200 300 400 500 600 700 -0.20 0.00 0.20 0.40 0.60 0.80 time(s) v ce (v) -5 0 5 10 15 20 25 30 35 i ce (a) 90% i ce 5% v ce 5% i ce eof f loss tf -100 0 100 200 300 400 500 600 700 15.90 16.00 16.10 16.20 16.30 time (s) v ce (v) -10 0 10 20 30 40 50 60 70 i ce (a) test current 90% test current 5% v ce 10% test curren t tr eon loss 0 100 200 300 400 500 600 -5.00 0.00 5.00 10.00 15.00 time (s) v ce (v) 0 50 100 150 200 250 300 i ce (a) v ce i ce irgb/s/sl30b60kpbf 10 www.irf.com note: "p" in assembly line position indicates "lead-free" irgb/s/sl30b60kpbf www.irf.com 11 ! irgb/s/sl30b60kpbf 12 www.irf.com to-262 part marking information to-262 package outline ! " ## igbt 1- gate irgb/s/sl30b60kpbf www.irf.com 13 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 05/05 data and specifications subject to change without notice. to-220ab package is not recommended for surface mount application. notes: v cc = 80% (v ces ), v ge = 20v, l = 28h, r g = 22 ?. this is only applied to to-220ab package. this is applied to d 2 pak, when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. energy losses include "tail" and diode reverse recovery. calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ |
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